PART |
Description |
Maker |
IKW75N65ES5-15 |
5 high Speed soft switching IGBT with full current rated RAPID 1 diode
|
Infineon Technologies A...
|
IKB15N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
IKW40N65ES5-15 |
high Speed soft switching IGBT with full current rated RAPID 1 diode
|
Infineon Technologies A...
|
MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor Toshiba Corporation
|
Q67078-A4402-A2 BUP203 BUP203SMD |
IGBT Transistor From old datasheet system IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 21 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
PG-TO220-3-FP IKA08N65F5 |
High speed 5 FAST IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft anti parallel diode
|
Infineon Technologies AG
|
RJH60F7ADPK RJH60F7ADPK-00-T0 |
90 A, 600 V, N-CHANNEL IGBT Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
IXYH50N120C3D1 |
High-Speed IGBT for 20-50 kHz Switching
|
IXYS Corporation
|
RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|